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ADVANCE INFORMATION
DS3627 - 1.3
SL3145
1.6GHz NPN TRANSISTOR ARRAYS
The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The transistors exhibit typical fTS of 1.6GHz and wideband noise figures of 3.0dB The device is pin compatible with the CA3046.
FEATURES
s s s fT Typically 1.6GHz Wideband Noise Figure 3.0dB VBE Matching Better Than 5mV
MP14
Fig.1 Pin connections SL3145
APPLICATIONS
s s s s s Wide Band Amplifiers PCM Regenerators High Speed Interface Circuits High Performance Instrumentation Amplifiers High Speed Modems
ORDERING INFORMATION
SL3145 C MP
Fig.2 Transition frequency (fT) v. collector current (VCB= 2V, f=200MHz)
SL3145
ELECTRICAL CHARACTERISTICS These characteristics are guaranteed over the following test conditions (unless otherwise stated) Tamb = 22C 2C Characteristic Static characteristic Collector base breakdown Collector emitter breakdown Collector substrate breakdown (isolation) Base to isolation breakdown Base emitter voltage Collector emitter saturation voltage Emitter base leakage current Base emitter saturation voltage Base emitter voltage difference, all transistors expect TR1, TR2 Base emitter voltage difference TR1, TR2 Input offset current (except for TR1, TR2) Input offset current TR1, TR2 Temperature coefficient of VBE Temperature coefficiient of VBE Static forward current ratio Collector base leakage Collector isolation leakage Base isolation leakage Emitter base capacitance Collector base capacitance SL3145 Collector isolation capacitance Dynamic characteristics Transition frequency SL3145 Wideband noise figure Knee of 1/f noise curve Symbol Min. BVCBO LVCEO BVCIO BVBIO VBE VCE(SAT) IEBO VBE(SAT) VBE VBE IB IB VBE T VBE T HFE ICBO ICIO IBIO CEB CCB CCI 20 15 20 10 0.64 Value Typ. 30 18 55 20 0.74 0.26 0.1 0.95 0.45 0.35 0.2 0.2 2.0 -1.6 40 100 0.3 0.6 100 0.4 0.4 0.8 Max. V V V V V V A V mV mV A A V/C mV/C IC = 10A, IE = 0 IC = 1mA, IB = 0 IC = 10A, IR = IE = 0 IB = 10A, IC = IE = 0 VCE = 6V, IC = 1mA IC = 10mA, IB = 1mA VEB = 4V IC = 10mA, IB = 1mA VCE = 6V, IC = 1mA VCE = 6V, IC = 1mA VCE = 6V, IC = 1mA VCE = 6V, IC = 1mA Units Conditions
0.84 0.5 1 5 5 3 2
VCE = 6V, IC = 1mA VCE = 6V, IC = 1mA VCB = 16V VCI = 20V VBI = 5V VEB = 0V VCB = 0V VCI = 0V
nA nA nA pF pF pF
fT NF
1.6 3.0 1
GHz dB KHz
VCE = 6V, IC = 5mA VCE = 2V, RS = 1k IC = 100A, f = 60MHz VCE = 6V, RS = 200 IC = 2mA
ABSOLUTE MAXIMUM RATINGS
The absolute maximum ratings are limiting values above which operating life may be shortened or specified parameters may be degraded. All electrical ratings apply to individual transistors. Thermal ratings apply to the total package. The isolation pin (substrate) must be connected to the most negative voltage applied to the package to maintain electrical isolation. VCB = 20 volt VEB = 4.0 volt VCE = 15 volt VCI = 20 volt IC = 20 mA Maximum individual transistor dissipation 200 mWatt Storage temperature -55C to 150C Max junction temperature 150C Package thermal resistance (C/watt):Package Type Chip to case Chip to ambient MP14 45C/W 123C/W
NOTE: If all the power is being dissipated in one transistor, these thermal resistance figures should be increased by 100C/watt
SL3145
Fig.3 Transition frequency (fT) v. collector base voltage (IC = 5mA, Frequency = 200MHz)
Fig.4 Variation of transition frequency (fT) with temperature
SL3145
Fig.5 DC current gain v. collector current
Fig.6 Z11 (derived from scattering parameters) v. frequency (Z11
rbb)
SL3145
SL3145
HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: (0793) 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017, United States of America. Tel: (408) 438 2900 Fax: (408) 438 5576
CUSTOMER SERVICE CENTRES * FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax : (1) 64 46 06 07 * GERMANY Munich Tel: (089) 3609 06-0 Fax : (089) 3609 06-55 * ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993 * JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510 * NORTH AMERICA Scotts Valley, USA Tel (408) 438 2900 Fax: (408) 438 7023. * SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872 * SWEDEN Stockholm, Tel: 46 8 702 97 70 Fax: 46 8 640 47 36 * UK, EIRE, DENMARK, FINLAND & NORWAY Swindon Tel: (0793) 518510 Fax : (0793) 518582 These are supported by Agents and Distributors in major countries world-wide. (c) GEC Plessey Semiconductors 1994
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior knowledge the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

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